A S‐Scheme MOF‐on‐MOF Heterostructure

Multiscale Modeling of a Quantum Dot Heterostructure

A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and tight-binding (TB) electronic structure description for the confined quantum states in the QD, the TB calculation requires substantial computational resources. To allevi...

A Silicon-Polymer Heterostructure for Sensor Applications

We report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin lms 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at 1.0 Volt bias. The devices are very sensitive to -radiation up ...

Anomalous nonlinear photoresponse in a InGaNÕGaN heterostructure

The nonlinear ~third to fourth order! as well as linear photoconductivity in a Gallium nitride/ Indium-Gallium nitride ~GaN/InGaN! heterostructure is investigated using femtosecond pulses in the infrared ~IR! and near ultraviolet ~UV!. An anomalous IR photoresponse is explained by a four level model for the GaN region including defect density fluctuations and nonlinear carrier transport phenome...

Heterostructure and Quantum Well Physics

Graphene/h-BN Heterostructure Interconnects

The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (hBN). A novel layer-based transfer technique is developed to construct the h-...